View FSBB30CH60CT_9067405.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

to learn more about on semiconductor, please visit our website at www.onsemi.com please note: as part of the fairchild semiconductor integration, some of the fairchild orderable part numbers will need to change in order to meet on semiconductors system requirements. since the on semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the fairchild part numbers will be changed to a dash (-). this document may contain device numbers with an underscore (_). please check the on semiconductor website to verify the updated device numbers. the most current and up-to-date ordering information can be found at www.onsemi.com . please email any questions regarding the system integration to fairchild_questions@onsemi.com . is now part of on semiconductor and the on semiconductor logo are trademarks of semico nductor components industries, llc dba on semiconductor or its subsid iaries in the united states and/or other countries. on semiconductor ow ns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellec tual property. a listing of on semiconductor?s product/patent cover age may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semicon ductor makes no warranty, representation or guarantee regarding the s uitability of its products for any particular purpose, nor does on semico nductor assume any liability arising out of the application or use of any product or circuit, and speci?ca lly disclaims any and all liability, including without limitation spe cial, consequential or incidental damages. buyer is responsible for i ts products and applications using on semiconductor products, including compliance with all laws, regul ations and safety requirements or standards, regardless of any suppor t or applications information provided by on semiconductor. ?typica l? parameters which may be provided in on semiconductor data sheets and/or speci?cations can and do vary in diffe rent applications and actual performance may vary over time. all operat ing parameters, including ?typicals? must be validated for each custo mer application by customer?s technical experts. on semiconductor does not convey any license und er its patent rights nor the rights of others. on semiconductor products a re not designed, intended, or authorized for use as a critical compone nt in life support systems or any fda class 3 medical devices or medical devices with a same or similar classi?ca tion in a foreign jurisdiction or any devices intended for implantation i n the human body. should buyer purchase or use on semiconductor products fo r any such unintended or unauthorized application, buyer shall indemnify and hold on semico nductor and its of?cers, employees, subsidiaries, af?liates, and di stributors harmless against all claims, costs, damages, and expense s, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associa ted with such unintended or unauthorized use, even if such claim alleges th at on semiconductor was negligent regarding the design or manufacture o f the part. on semiconductor is an equal opportunity/af?rmative action employer. this literatu re is subject to all applicable copyright laws and is not for resale in any manne r.
FSBB30CH60CT motion spm? 3 series january 2014 ?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FSBB30CH60CT rev. c3 FSBB30CH60CTmotion spm ? 3 series features ul certified no. e209204 (ul1557) 600 v - 30 a 3-phase igbt inverter with integral gate drivers and protection low-loss, short-circuit rated igbts very low thermal resistance using al 2 o 3 dbc sub- strate built-in bootstrap diodes and dedicated vs pins sim- plify pcb layout separate open-emitter pins from low-side igbts for three-phase current sensing single-grounded power supply isolation rating: 2500 v rms / min. applications motion control - home appliance / industrial motor related resources an-9044 - motion spm? 3 series users guide general description FSBB30CH60CT is an advanced motion spm ? 3 mod- ule providing a fully-featured , high-performance inverter output stage for ac induction, bldc, and pmsm motors. these modules integr ate optimized gate drive of the built-in igbts to minimize emi and losses, while also providing multiple on-module protection features includ- ing under-voltage lockouts, over-current shutdown, and fault reporting. the built-in, high-speed hvic requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal igbts. separate negative igbt terminals are available for each phase to support the widest variety of control algorithms. package marking and ordering inform ation figure 1. package overview device device marking package packing type quantity FSBB30CH60CT FSBB30CH60CT spmcc-027 rail 10
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FSBB30CH60CT rev. c3 integrated power functions 600 v - 30 a igbt inverter for three-phase dc / ac power conversion (please refer to figure 3) integrated drive, protection, and system control functions for inverter high-side igbts: gate drive circ uit, high-voltage isolated high-speed level shifting control circuit under-voltage lock-out protection (uvlo) note: available bootstrap circuit example is given in figures 12 and 13. for inverter low-side igbts: gate driv e circuit, short-circuit protection (scp) control supply circuit under-v oltage lock-out protection (uvlo) fault signaling: corresponding to uvlo (low-side supply) and sc faults input interface: active-high interface, wor ks with 3.3 / 5 v logic, schmitt-trigger input pin configuration figure 2. top view
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FSBB30CH60CT rev. c3 pin descriptions pin number pin name pin description 1v cc(l) low-side common bias voltage for ic and igbts driving 2 com common supply ground 3i n (ul) signal input for low-side u-phase 4i n (vl) signal input for low-side v-phase 5i n (wl) signal input for low-side w-phase 6v fo fault output 7c fod capacitor for fault output duration selection 8c sc capacitor (low-pass filter) for shor t-circuit current detection input 9i n (uh) signal input for high-side u-phase 10 v cc(h) high-side common bias voltage for ic and igbts driving 11 v b(u) high-side bias voltage for u-phase igbt driving 12 v s(u) high-side bias voltage ground for u-phase igbt driving 13 in (vh) signal input for high-side v-phase 14 v cc(h) high-side common bias voltage for ic and igbts driving 15 v b(v) high-side bias voltage for v-phase igbt driving 16 v s(v) high-side bias voltage ground for v phase igbt driving 17 in (wh) signal input for high-side w-phase 18 v cc(h) high-side common bias voltage for ic and igbts driving 19 v b(w) high-side bias voltage for w-phase igbt driving 20 v s(w) high-side bias voltage ground for w-phase igbt driving 21 n u negative dc-link input for u-phase 22 n v negative dc-link input for v-phase 23 n w negative dc-link input for w-phase 24 u output for u-phase 25 v output for v-phase 26 w output for w-phase 27 p positive dc-link input
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FSBB30CH60CT rev. c3 internal equivalent circ uit and input/output pins figure 3. internal block diagram 1st notes: 1. inverter low-side is composed of three igbts, freewheeling diodes for each igbt, and one contro l ic. it has gate drive and p rotection functions. 2. inverter power side is composed of four inverter dc-link input terminals and three inverter outp ut terminals. 3. inverter high-side is composed of three igbts, freewheeling diodes, and three drive ics for each i gbt. com vcc in(ul) in(vl) in(wl) vfo c(fod) c(sc) out(ul) out(vl) out(wl) n u (21) n v (22) n w (23) u (24) v (25) w (26) p (27) (20) v s(w) (19) v b(w) (16) v s(v) (15) v b(v) (8) c sc (7) c fod (6) v fo (5) in (wl) (4) in (vl) (3) in (ul) (2) com (1) v cc(l) vcc vb out com vs in vb vs out in com vcc vcc vb out com vs in (18) v cc(h) (17) in (wh) (14) v cc(h) (13) in (vh) (12) v s(u) (11) v b(u) (10) v cc(h) (9) in (uh) v sl
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FSBB30CH60CT rev. c3 absolute maximum ratings (t j = 25c, unless otherwise specified.) inverter part 2nd notes: 1. the maximum junction temperature rating of the power chips integrated within the motion s pm ? 3 product is 150 ? c (at t c ? 125 ? c). control part bootstrap diode part total system thermal resistance 2nd notes: 2. for the measurement point of case temperature (t c ), please refer to figure 2. symbol parameter conditions rating unit v pn supply voltage applied between p - n u , n v , n w 450 v v pn(surge) supply voltage (surge) applied between p - n u , n v , n w 500 v v ces collector - emitter voltage 600 v i c each igbt collector current t c = 25c, t j ?? 150c 30 a i cp each igbt collector current (peak) t c = 25c, t j ?? 150c, under 1 ms pulse width 60 a p c collector dissipation t c = 25c per chip 78 w t j operating junction temperature (2nd note 1) - 40 ~ 150 c symbol parameter conditions rating unit v cc control supply voltage applied between v cc(h) , v cc(l) - com 20 v v bs high-side control bias voltage applied between v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) 20 v v in input signal voltage applied between in (uh) , in (vh) , in (wh) , in (ul) , in (vl) , in (wl) - com -0.3 ~ v cc + 0.3 v v fo fault output supply voltage applied between v fo - com -0.3 ~ v cc + 0.3 v i fo fault output current sink current at v fo pin 5 ma v sc current-sensing input voltage applied between c sc - com -0.3 ~ v cc + 0.3 v symbol parameter conditions rating unit v rrm maximum repetitive reverse voltage 600 v i f forward current t c = 25c, t j ?? 150c 0.5 a i fp forward current (peak) t c = 25c, t j ?? 150c under 1 ms pulse width 2.0 a t j operating junction temperature -40 ~ 150 c symbol parameter conditions rating unit v pn(prot) self-protection supply voltage limit (short-circuit protection capability) v cc = v bs = 13.5 ~ 16.5 v t j = 150c, non-repetitive, < 2 ? s 400 v t c module case operation temperature -40 ? c ??? t j ? 150 ? c, see figure 2 -40 ~ 125 c t stg storage temperature -40 ~ 125 c v iso isolation voltage 60 hz, sinusoidal, ac 1 minute, connect pins to heat sink plate 2500 v rms symbol parameter conditions min. typ. max. unit r th(j-c)q junction to case thermal resistance inverter igbt part (per 1 / 6 module) - - 1.60 c / w r th(j-c)f inverter fwdi part (per 1 / 6 module) - - 2.40 c / w
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FSBB30CH60CT rev. c3 electrical characteristics (t j = 25c, unless otherwise specified.) inverter part 2nd notes: 3. t on and t off include the propagation delay of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see figure 4. control part 2nd notes: 4. short-circuit protection is functioning only at the low-sides. 5. the fault-out pulse width t fod depends on the capacitance value of c fod according to the following approximate equation: c fod = 18.3 x 10 -6 x t fod [f] symbol parameter conditions min. typ. max. unit v ce(sat) collector - emitter saturation voltage v cc = v bs = 15 v v in = 5 v i c = 30 a, t j = 25c - 2.0 2.6 v v f fwdi forward voltage v in = 0 v i f = 30 a, t j = 25c - 1.9 2.5 v hs t on switching times v pn = 300 v, v cc = v bs = 15 v i c = 30 a v in = 0 v ? 5 v, inductive load (2nd note 3) -0 . 7 5- ? s t c(on) -0 . 2- ? s t off -0 . 4- ? s t c(off) -0 . 1- ? s t rr -0 . 1- ? s ls t on v pn = 300 v, v cc = v bs = 15 v i c = 30 a v in = 0 v ? 5 v, inductive load (2nd note 3) -0 . 5 5- ? s t c(on) -0 . 3 5- ? s t off -0 . 4- ? s t c(off) -0 . 1- ? s t rr -0 . 1- ? s i ces collector - emitter leakage current v ce = v ces --1m a symbol parameter conditions min. typ. max. unit i qccl quiescent v cc supply current v cc = 15 v in (ul, vl, wl) = 0 v v cc(l) - com - - 23 ma i qcch v cc = 15 v in (uh, vh, wh) = 0 v v cc(h) - com - - 600 ? a i qbs quiescent v bs supply current v bs = 15 v in (uh, vh, wh) = 0 v v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) - - 500 ? a v foh fault output voltage v sc = 0 v, v fo circuit: 4.7 k ? to 5 v pull-up 4.5 - - v v fol v sc = 1 v, v fo circuit: 4.7 k ? to 5 v pull-up - - 0.8 v v sc(ref) short-circuit current trip level v cc = 15 v (2nd note 4) 0.45 0.50 0.55 v tsd over-temperature protection temperature at lvic - 160 - c ? tsd over-temperature protection hysterisis temperature at lvic - 5 - c uv ccd supply circuit under-voltage protection detection level 10.7 11.9 13.0 v uv ccr reset level 11.2 12.4 13.4 v uv bsd detection level 10 11 12 v uv bsr reset level 10.5 11.5 12.5 v t fod fault-out pulse width c fod = 33 nf (2nd note 5) 1.0 1.8 - ms v in(on) on threshold voltage applied between in (uh) , in (vh) , in (wh) , in (ul) , in (vl) , in (wl) - com 2.8 - - v v in(off) off threshold voltage - - 0.8 v
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FSBB30CH60CT rev. c3 figure 4. switching time definition figure 5. switching loss ch aracteristics (typical) v ce i c v in t on t c(on) v in(on) 10% i c 10% v ce 90% i c 100% i c t rr 100% i c 0 v ce i c v in t off t c(off) v in(off) 10% v ce 10% i c (a) turn-on (b) turn-off 0 3 6 9 12 15 18 21 24 27 30 33 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 switching loss(on) vs. collector current v ce =300v v cc =15v v in =5v t j =25 t j =150 switching loss, e sw(on) [uj] collector current, i c [amperes] 0 3 6 9 12 15 18 21 24 27 30 33 0 100 200 300 400 500 600 700 800 900 switching loss(off) vs. collector current v ce =300v v cc =15v v in =5v t j =25 t j =150 switching loss, e sw(off) [uj] collector current, i c [amperes]
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FSBB30CH60CT rev. c3 bootstrap diode part figure 6. built-in bootstrap diode characteristics 2nd notes: 6. built-in bootstrap diode includes around 15 ? resistance characteristic. recommended oper ating conditions symbol parameter conditions min. typ. max. unit v f forward voltage i f = 0.1 a, t c = 25c - 2.5 - v t rr reverse-recovery time i f = 0.1 a, t c = 25c - 80 - ns symbol parameter conditions min. typ. max. unit v pn supply voltage applied between p - n u , n v , n w - 300 400 v v cc control supply voltage applied between v cc(h) , v cc(l) - com 13.5 15.0 16.5 v v bs high-side bias voltage applied between v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) 13.0 15.0 18.5 v dv cc / dt, dv bs / dt control supply variation -1 - 1 v / ? s t dead blanking time for preventing arm-short each input signal 2 - - ? s f pwm pwm input signal -40 ? c ?? t c ? 125c, -40 ? c ?? t j ?? 150c - - 20 khz v sen voltage for current sensing applied between n u , n v , n w - com (including surge voltage) -4 4 v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 built-in bootstrap diode v f -i f characteristic t c =25 o c i f [a] v f [v]
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FSBB30CH60CT rev. c3 mechanical characteristics and ratings figure 7. flatness measurement position parameter conditions min. typ. max. unit mounting torque mounting screw: m3 recommended 0.62 n m 0.51 0.62 0.80 n m device flatness see figure 7 0 - +150 ? m weight - 15.00 - g ( + ) ( + ) ( + ) ( + )
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FSBB30CH60CT rev. c3 time charts of protective function a1 : control supply voltage rises: after the voltage rises uv ccr , the circuits start to operat e when next input is applied. a2 : normal operation: igbt on and carrying current. a3 : under-voltage detection (uv ccd ). a4 : igbt off in spite of control input condition. a5 : fault output operation starts. a6 : under-voltage reset (uv ccr ). a7 : normal operation: igbt on and carrying current. figure 8. under-voltage protection (low-side) b1 : control supply voltage rises: after the voltage reaches uv bsr , the circuits start to operate when next input is applied. b2 : normal operation: igbt on and carrying current. b3 : under-voltage detection (uv bsd ). b4 : igbt off in spite of control input c ondition, but there is no fault output signal. b5 : under-voltage reset (uv bsr ). b6 : normal operation: igbt on and carrying current. figure 9. under-voltage protection (high-side) input signal output current fault output signal control supply voltage reset uv ccr protection circuit state set reset uv ccd a1 a3 a2 a4 a6 a5 a7 input signal output current fault output signal control supply voltage reset uv bsr protection circuit state set reset uv bsd b1 b3 b2 b4 b6 b5 high-level (no fault output)
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 11 www.fairchildsemi.com FSBB30CH60CT rev. c3 (with the external shunt resistance and cr connection) c1 : normal operation: igbt on and carrying current. c2 : short-circuit current detection (sc trigger). c3 : hard igbt gate interrupt. c4 : igbt turns off. c5 : fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor c fo . c6 : input low: igbt off state. c7 : input high: igbt on state, but during the ac tive period of fault output, the igbt doesnt turn on. c8 : igbt off state. figure 10. short-circuit protection (low-side operation only) internal igbt gate - emitter voltage lower arms control input output current sensing voltage of shunt resistance fault output signal sc reference voltage cr circuit time constant delay sc protection circuit state set reset c6 c7 c3 c2 c1 c8 c4 c5
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 12 www.fairchildsemi.com FSBB30CH60CT rev. c3 figure 11. recommended mcu i/o interface circuit 3rd notes: 1. rc coupling at each input might change depending on the pwm control scheme in the application and the wiring impedan ce of th e applications printed circuit board. the input signal section of the motion spm ? 3 product integrates a 5 k ?? ( typ.) pull-down resistor. therefore, when using an external filtering resistor, pl ease pay attention to the signal voltage drop at input terminal. 2. the logic input works with standard cmos or lsttl outputs. figure 12. recommended bootstrap operation circuit and parameters 3rd notes: 3. the ceramic capacitor placed between v cc - com should be over 1 ? f and mounted as close to the pins of the motion spm 3 product as possible. mcu spm com +5 v ,, in (ul) in (vl) in (wl) ,, in (uh) in (vh) in (wh) v fo 1 nf c pf = 1 nf r pf = 4.7 ? 100 ? 100 ? 1 nf 1 nf 100 ? 15 v 22 f 0.1 f 1000 f1 f one-leg diagram of motion spm 3 product inverter output p n these values depend on pwm control algorithm. vcc in com vb ho vs vcc in com out v sl
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 13 www.fairchildsemi.com FSBB30CH60CT rev. c3 figure 13. typical application circuit 4th notes: 1. to avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3cm). 2. by virtue of integrating an application-specific type of hvic inside the motion spm ? 3 product, direct coupling to mcu terminals without any optocoupler or transformer isola- tion is possible. 3. v fo output is open-collector type. this signal line should be pulled up to the positive side of the 5 v power supply with approxim ately 4.7 k ? resistance (please refer to figure11). 4. c sp15 of around seven times larger than bootstrap capacitor c bs is recommended. 5. v fo output pulse width should be determined by connecting an external capacitor (c fod ) between c fod (pin 7) and com (pin 2). (example: if c fod = 33 nf, then t fo = 1.8 ms (typ.)) please refer to the 2nd note 5 for calculation method. 6. input signal is active-high type. there is a 5 k ? resistor inside the ic to pull down each input signal line to gnd. rc coupling circuits should be used to prevent input signal oscillation. r s c ps time constant should be selected in the range 50 ~ 150 ns . c ps should not be less than 1 nf ( recommended r s = 100 ? , c ps = 1 nf). 7. to prevent errors of the protection function, the wiring around r f and c sc should be as short as possible. 8. in the short-circuit protection circuit, please select the r f c sc time constant in the range 1.5 ~ 2.0 ? s. 9. each capacitor should be mounted as close to the pins of the motion spm 3 product as possible. 10. to prevent surge destruction, the wiring between the smoothing capacitor and the p & gnd pins should be as short as possib le. the use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 ? f between the p & gnd pins is recommended. 11. relays are used in almost every systems of electrical equipme nt in home appliances. in these cases, there should be suffic ient distance between the mcu and the relays. 12. c spc15 should be over 1 ? f and mounted as close to the pins of the motion spm 3 product as possible. fault +15 v c bs c bsc c bs c bsc c bs c bsc c sp15 c spc15 c fod +5 v r pf c bpf r s m vdc c dcs gating uh gating vh gating wh gating wl gating vl gating ul c pf m c u r fu r fv r fw r su r sv r sw c fu c fv c fw w-phase current v-phase current u-phase current r f com vcc in(ul) in(vl) in(wl) vfo c(fod) c(sc) out(ul) out(vl) out(wl) n u (21) n v (22) n w (23) u (24) v (25) w (26) p (27) (20) v s(w) (19) v b(w) (16) v s(v) (15) v b(v) (8) c sc (7) c fod (6) v fo (5) in (wl) (4) in (vl) (3) in (ul) (2) com (1) v cc(l) vcc vb out com vs in vb vs out in com vcc vcc vb out com vs in (18) v cc(h) (17) in (wh) (14) v cc(h) (13) in (vh) (12) v s(u) (11) v b(u) (10) v cc(h) (9) in (uh) input signal for short-circuit protection c sc v sl r s r s r s r s r s r s c ps c ps c ps c ps c ps c ps
FSBB30CH60CT motion spm? 3 series ?2012 fairchild semiconductor corporation 14 www.fairchildsemi.com FSBB30CH60CT rev. c3 detailed package outline drawings package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or data on the drawing and contact a fairchildsemiconductor representative to veri fy or obtain the most recent revision. package s pecifications do not expand the terms of fa irchilds worldwide therm and conditions, specifically the the warranty therein, which covers fairchild products. always visit fairchild se miconductors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/mo/mod27ba.pdf
?2012 fairchild semiconductor corporation 15 www.fairchildsemi.com FSBB30CH60CT rev. c3
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. typical parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including typic als must be validated for each customer application by customers technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your localsales representative ? semiconductor components industries, llc

▲Up To Search▲

Price & Availability of FSBB30CH60CT

	To Download FSBB30CH60CT Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .